Towards interdependencies of aging mechanisms

With technology in deep nano scale, the susceptibility of transistors to various aging mechanisms such as Negative/ Positive Bias Temperature Instability (NBTI/PBTI) and Hot Carrier Induced Degradation (HCID) etc. is increasing. As a matter of fact, different aging mechanisms simultaneously occur in the gate dielectric of a transistor. In addition, scaling in conjunction with high-K materials has made aging mechanisms, that have often been assumed to be negligible (e.g., PBTI in NMOS and HCID in PMOS), become noticeable. Therefore, in this paper we investigate the key challenge of providing designers with an abstracted, yet accurate reliability estimation that combines, from the physical to system level, the effects of multiple simultaneous aging mechanisms and their interdependencies. We show that the overall aging can be modeled as a superposition of the interdependent aging effects. Our presented model deviates by around 6% from recent industrial physical measurements. We conclude from our experiments that an isolated treatment of individual aging mechanisms is insufficient to devise effective mitigation strategies in current and upcoming technology nodes. We also demonstrate that estimating reliability due to an individual dominant aging mechanism together with solely considering a single kind of failures, as currently is a main focus of state-of-the-art (e.g., [28], [22]), can result in 75% underestimation on average.