• DocumentCode
    2726323
  • Title

    Growth of dielectric-embedded silicon nanocrystallites for silicon integrated photonics

  • Author

    Wong, H. ; Wong, C.K.

  • Author_Institution
    Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
  • fYear
    2010
  • fDate
    16-19 May 2010
  • Firstpage
    15
  • Lastpage
    19
  • Abstract
    Silicon integrated photonics has attracted much attentions recently because of the available of silicon-based quantum devices and optical components. Dielectric films with embedded silicon nanocrystallites (Si-NCs) have been recognized as one of the promising light-emitting materials for this purpose. This work reviews some attempts reported recently for preparing dielectric-embedded Si-NCs based on the conventional CMOS processes. The mechanism for the Si-NCs formation is discussed. The material and light emitting properties of the as-prepared Si-NC embedded in dielectric films are studied in detail.
  • Keywords
    integrated optics; nanostructured materials; optical elements; dielectric films; dielectric-embedded silicon nanocrystallites; optical components; quantum devices; silicon integrated photonics; Annealing; CMOS process; Dielectric films; Dielectric materials; Electrodes; Optical materials; Photonics; Plasma temperature; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490537
  • Filename
    5490537