A Simple Electrical RLC Crosstalk Model for Interconnects on Silicon

Author

Huerta-Chua, Jesus ; Murphy-Arteaga, Roberto S.

Author_Institution

Dept. of Electron., National Inst. for Res. on Astrophys., Opt. & Electron., Puebla

fYear

2006

fDate

26-28 April 2006

Firstpage

79

Lastpage

82

Abstract

Crosstalk is generally recognized as a major problem in IC design. This paper presents the high-frequency characterization and modeling of a crosstalk-probe structure using a simple circuital RLC model. We demonstrate that a simple RLC circuit can accurately model all parasitic effects in interconnects on silicon. The structures were fabricated in AMIS 0.35mum C035M-A technology, using the two upper metal layers and SiO₂ as the inter-level dielectric, and measured using a vector network analyzer in the 40 MHz to 50 GHz range

Keywords

RLC circuits; crosstalk; elemental semiconductors; integrated circuit interconnections; integrated circuit modelling; silicon; silicon compounds; 0.04 to 50 GHz; 0.35 micron; RLC circuit; SiO₂; crosstalk-probe structure; electrical RLC crosstalk model; high-frequency characterization; inter-level dielectric; parasitic effects; upper metal layers; vector network analyzer; Ambient intelligence; Crosstalk; Dielectrics; Electromagnetic coupling; Electromagnetic measurements; Frequency; Inductance; Integrated circuit interconnections; RLC circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250833

Filename

4016869