Very High Speed SiGe Heterojunction Bipolar Transistor Reliability Overview

Author

Guarin, F. ; Yang, Z. ; Freeman, G.

Author_Institution

IBM Microelectron.

fYear

2006

fDate

26-28 April 2006

Firstpage

131

Lastpage

136

Abstract

We discuss the major reliability mechanisms and the implications arising from the structural changes required for the implementation of state of the art SiGe HBT´s. The current gain shift under forward and reverse device operating conditions has been characterized for 120, 200 and 350 GHz transistors. The effects of electromigration and self-heating versus f_T have also been studied. In general, it should be possible to continue scaling beyond today´s 350 GHz devices, with straightforward extension of the mechanisms and concerns outlined in this paper

Keywords

heterojunction bipolar transistors; millimetre wave transistors; semiconductor device reliability; submillimetre wave transistors; 120 GHz; 200 GHz; 350 GHz; SiGe; current gain shift; electromigration; forward device operating conditions; heterojunction bipolar transistor reliability; reverse device operating conditions; self-heating; Circuits and systems; Degradation; Electromigration; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Microelectronics; Silicon germanium; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250849

Filename

4016878