Title :
Very High Speed SiGe Heterojunction Bipolar Transistor Reliability Overview
Author :
Guarin, F. ; Yang, Z. ; Freeman, G.
Author_Institution :
IBM Microelectron.
Abstract :
We discuss the major reliability mechanisms and the implications arising from the structural changes required for the implementation of state of the art SiGe HBT´s. The current gain shift under forward and reverse device operating conditions has been characterized for 120, 200 and 350 GHz transistors. The effects of electromigration and self-heating versus fT have also been studied. In general, it should be possible to continue scaling beyond today´s 350 GHz devices, with straightforward extension of the mechanisms and concerns outlined in this paper
Keywords :
heterojunction bipolar transistors; millimetre wave transistors; semiconductor device reliability; submillimetre wave transistors; 120 GHz; 200 GHz; 350 GHz; SiGe; current gain shift; electromigration; forward device operating conditions; heterojunction bipolar transistor reliability; reverse device operating conditions; self-heating; Circuits and systems; Degradation; Electromigration; Electron mobility; Germanium silicon alloys; Heterojunction bipolar transistors; Indium phosphide; Microelectronics; Silicon germanium; Technological innovation;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250849
