Effect of Nitrogen and Hydrogen on the Charge Trapping Properties of Silicon Rich Oxide

Author

Yu, Zhenrui ; Aceves-Mijares, M. ; Carrillo, Jesus

Author_Institution

Dept. of Electron., INAOE, Puebla

fYear

2006

fDate

26-28 April 2006

Firstpage

161

Lastpage

164

Abstract

In this paper, the effect of nitrogen and hydrogen incorporation into silicon rich oxide (SRO) on its charge-trapping properties was studied. The samples were prepared by low pressure chemical vapor deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH₃ to the reactive gases. Hydrogen was incorporated by low temperature annealing in forming gas. The charge properties of the nitrogenated/hydrogenated SRO were studied applying a DC voltage stress previous to high frequency C-V measurements. It was found that N₂ increases significantly the charging density. An explanation is presented in order to interpret the experimental results

Keywords

annealing; chemical vapour deposition; electron traps; elemental semiconductors; hydrogen; nitrogen; silicon; silicon compounds; DC voltage stress; H; LPCVD; N; NH₃; charge properties; charge trapping properties; charging density; high frequency C-V measurements; hydrogenated SRO; low pressure chemical vapor deposition; low temperature annealing; nitrogenated SRO; reactive gases; silicon rich oxide; Annealing; Chemical vapor deposition; Frequency; Gases; Hydrogen; Nitrogen; Silicon; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250854

Filename

4016883