A General Analytical solution to the One-Dimensional Undoped Oxide-Silicon-Oxide System

Author

Ortiz-Conde, Adelmo ; Sánchez, Francisco J García ; Muci, Juan ; Malobabic, Slavica

Author_Institution

Solid State Electron. Lab., Univ. Simon Bolivar, Caracas

fYear

2006

fDate

26-28 April 2006

Firstpage

177

Lastpage

182

Abstract

A physical model of the one-dimensional undoped oxide-silicon-oxide system is presented based on the solution of its surface potential versus distance. It is proved that both previous approximate analytical solutions, for the cases when the electric field does and does not vanish inside the semiconductor, are completely equivalent. Approximate asymptotic analytical solutions are presented and compared to exact results numerically calculated by iteration. The results attest to the excellent accuracy of this formulation

Keywords

iterative methods; silicon compounds; silicon-on-insulator; surface potential; 1D undoped oxide-silicon-oxide system; O₂-Si-O₂; asymptotic analytical solutions; electric field; surface potential; CMOS technology; Circuits and systems; Laboratories; MOSFET circuits; Nanoscale devices; Poisson equations; Semiconductor films; Silicon on insulator technology; Solid modeling; Solid state circuits; Intrinsic channel; MOS compact modeling; SOI; Single MOSFET; Undoped body MOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250857

Filename

4016886