Microwave Amplification Using Space Charge Waves in Strained Si/SiGe Heterostructures at 77K

Author

Garcia-B, Abel ; Grimalsky, Volodymyr ; Gutierrez, Edmundo A.

Author_Institution

Electron. Dept., INAOE, Puebla

fYear

2006

fDate

26-28 April 2006

Firstpage

183

Lastpage

186

Abstract

Based on the negative differential conductance phenomenon, we theoretically investigate the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K. A comparison between the n-GaAs thin film and strained Si/SiGe heterostructure of this amplification effect is included as well. We have obtained 2D results of the propagation and amplification of space charge waves in a strained Si/SiGe heterostructure up to a frequency f of 40 GHz

Keywords

Ge-Si alloys; III-V semiconductors; amplification; elemental semiconductors; gallium arsenide; millimetre wave amplifiers; millimetre wave bipolar transistors; silicon; space charge waves; wave propagation; 77 K; GaAs; Si-SiGe; amplification effect; microwave amplification; n-GaAs thin film; negative differential conductance phenomenon; space charge waves; strained Si/SiGe heterostructures; BiCMOS integrated circuits; Conductivity; Electron mobility; Frequency; Germanium silicon alloys; Microwave antennas; Poisson equations; Silicon germanium; Space charge; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

1-4244-0041-4

Electronic_ISBN

1-4244-0042-2

Type

conf

DOI

10.1109/ICCDCS.2006.250858

Filename

4016887