Title :
RF Transistors: Performance Trends Versus ITRS Targets
Author_Institution :
Fachgebiet Festkorperelektronik, Technische Univ. Ilmenau
Abstract :
This paper provides an overview of the frequency performance required for future RF transistors specified as targets in the 2005 issue of the ITRS. The targets are compared to the performance of state of the art RF transistors and problems to achieve the targets are discussed. Special emphasis is given to Si-based RF transistors, i.e., Si RF MOSFETs and SiGe HBTs, but some information on III-V transistors is also included
Keywords :
Ge-Si alloys; III-V semiconductors; MOSFET; heterojunction bipolar transistors; performance evaluation; HBT; III-V transistors; ITRS targets; RF MOSFET; Si; SiGe; frequency performance; performance trends; state of the art RF transistors; Circuits and systems; Cutoff frequency; Electronics industry; FETs; Germanium silicon alloys; MOSFETs; Manufacturing; Optimized production technology; Radio frequency; Silicon germanium;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250860
