DocumentCode
2726856
Title
RF Transistors: Performance Trends Versus ITRS Targets
Author
Schwierz, Frank
Author_Institution
Fachgebiet Festkorperelektronik, Technische Univ. Ilmenau
fYear
2006
fDate
26-28 April 2006
Firstpage
195
Lastpage
200
Abstract
This paper provides an overview of the frequency performance required for future RF transistors specified as targets in the 2005 issue of the ITRS. The targets are compared to the performance of state of the art RF transistors and problems to achieve the targets are discussed. Special emphasis is given to Si-based RF transistors, i.e., Si RF MOSFETs and SiGe HBTs, but some information on III-V transistors is also included
Keywords
Ge-Si alloys; III-V semiconductors; MOSFET; heterojunction bipolar transistors; performance evaluation; HBT; III-V transistors; ITRS targets; RF MOSFET; Si; SiGe; frequency performance; performance trends; state of the art RF transistors; Circuits and systems; Cutoff frequency; Electronics industry; FETs; Germanium silicon alloys; MOSFETs; Manufacturing; Optimized production technology; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location
Playa del Carmen
Print_ISBN
1-4244-0041-4
Electronic_ISBN
1-4244-0042-2
Type
conf
DOI
10.1109/ICCDCS.2006.250860
Filename
4016889
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