Title :
ROBDD-based area minimization synthesis for reconfigurable single-electron transistor arrays
Author :
Yi-Hang Chen ; Yang Chen ; Juinn-Dar Huang
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The power dissipation has become a crucial issue for most electronic circuit and system designs nowadays when fabrication processes exploit even deeper submicron technology. In particular, leakage power is becoming a dominant source of power consumption. In recent years, the reconfigurable single-electron transistor (SET) array has been proposed as an emerging circuit design style for continuing Moore´s Law due to its ultra-low power consumption. Several automated synthesis techniques for area minimization have been developed for the reconfigurable SET array in the past few years. Nevertheless, most of those existing methods focus on variable and product term reordering during SET mapping. In fact, minimizing the number of product terms can greatly reduce the area as well, which has not been well addressed before. In this paper, we propose a dynamic shifting based variable ordering algorithm that can minimize the number of disjoint sum-of-product terms extracted from the given ROBDD. Experimental results show that the proposed method can achieve an area reduction of up to 49% as compared to current state-of-the-art techniques.
Keywords :
binary decision diagrams; low-power electronics; minimisation; power consumption; single electron transistors; Moore´s law; ROBDD-based area minimization synthesis; SET array; SET mapping; automated synthesis techniques; circuit design style; disjoint sum-of-product terms; dynamic shifting based variable ordering algorithm; electronic circuit; fabrication processes; leakage power; power dissipation; product term reordering; reconfigurable single-electron transistor arrays; submicron technology; system designs; ultra-low power consumption; Boolean functions; Data structures; Fabrication; Heuristic algorithms; Minimization; Runtime; Single electron transistors;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-DAT.2015.7114494