Title :
Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance
Author :
Schwaha, P. ; Heinzl, R. ; Grasser, Tibor ; Brezna, W. ; Smoliner, J.
Author_Institution :
CDL-IUE TU Wien, Vienna
Abstract :
It is shown that surface roughness becomes increasingly important as oxide thicknesses decrease. Silicon-silicon dioxide capacitances with thicknesses of 7 nm, 15 nm, and 50 nm are measured with an atomic force microscope (AFM). The height data thusly obtained is used to create three dimensional simulation structures to reproduce measurement data obtained from leakage current measurements. The leakage currents are simulated using the Fowler-Nordheim (FN) tunnelling current model
Keywords :
atomic force microscopy; electric current measurement; leakage currents; semiconductor device breakdown; semiconductor device models; surface roughness; 15 nm; 3D simulation structures; 50 nm; 7 nm; Fowler-Nordheim tunnelling current model; atomic force microscope; leakage current analysis; leakage current measurements; oxide thickness; silicon-silicon dioxide capacitance; surface roughness; Atomic force microscopy; Atomic measurements; Capacitance measurement; Current measurement; Force measurement; Leakage current; Rough surfaces; Surface roughness; Thickness measurement; Tunneling;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250888
