Title :
Degradation and Recovery of NMOS Subthreshold Leakage Current by Off-state Hot Carrier Stress
Author :
Yang, Z. ; Guarin, F.
Author_Institution :
IBM Microelectron.
Abstract :
We have studied the degradation in the off-state channel surface leakage current. This shift in the device leakage was found to be driven by a hot carrier mechanism in NMOS devices. The observed subthreshold current increase was studied and its origin was determined to be charging traps. The subsequent recovery of this electrical stress induced leakage current by the application of various gate bias conditions has also been documented and explained in this work. The implications of temperature, channel length and voltage conditions have been characterized
Keywords :
MOSFET; hot carriers; leakage currents; semiconductor device breakdown; semiconductor device reliability; stress effects; NMOS devices; electrical stress; gate bias conditions; hot carrier mechanism; off-state channel surface leakage current; CMOS technology; Degradation; Energy consumption; Hot carriers; Impact ionization; Leakage current; MOS devices; Stress; Subthreshold current; Voltage;
Conference_Titel :
Devices, Circuits and Systems, Proceedings of the 6th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
1-4244-0041-4
Electronic_ISBN :
1-4244-0042-2
DOI :
10.1109/ICCDCS.2006.250889
