Study of ESD evaluation methods for charged device model

Through the investigation of several evaluation methods for CDM ESD, the following results have been found. 1. Although the waveforms of SCM (Small Capacitance Method: 10 pF, 0 /spl Omega/) and three commercial CDM equipments are different, the destructive voltage for dielectric failure is equivalent. SCM is an efficient and easy test method for high speed ESD evaluation. 2. It is necessary to apply a different ESD protection strategy and circuit for CDM and SCM than for HBM. 3. The destructive voltage for memory devices on the market ranges from 350 to 4000 V. Although CDM and SCM are efficient test methods for scaled semiconductor devices, there are several problems at present (for example the measurement method of the waveform and the specification of the destructive voltage).