Title :
An SDR duplex filter in SOI technology
Author :
Pourakbar, Mohammadreza ; Eslampanah, Raheleh ; Faulkner, Michael ; Törmänen, Markus ; Sjöland, Henrik
Author_Institution :
Coll. of Eng. & Sci., Victoria Univ., Melbourne, VIC, Australia
Abstract :
A Software-Defined Radio (SDR) mobile handset must cover multiple frequency bands with different frequency division duplex distances. This calls for an adaptive duplexer, which needs a low-isolation device to create an initial isolation. Such a device is implemented in a 130 nm Silicon-on-Insulator (SOI) process. Its performance benefits from a high-Q laminated PCB inductor which has a measured inductance and Q-factor at 2 GHz of 1.19 nH and 125, respectively. The tunable low-isolation device provides an isolation exceeding 30 dB at both transmit and receive frequencies of each targeted four LTE frequency bands. The insertion loss from PA to antenna is below 2 dB in LTE band I. The implemented circuit occupies an area of 2.4 mm2.
Keywords :
Long Term Evolution; Q-factor; inductors; mobile handsets; printed circuits; silicon-on-insulator; software radio; LTE frequency bands; Q-factor; SDR duplex filter; SOl technology; adaptive duplexer; frequency 2 GHz; high-Q laminated PCB inductor; inductance; insertion loss; low-isolation device; silicon-on-insulator process; size 130 nm; software-defined radio mobile handset; tunable low-isolation device; Inductors; Service-oriented architecture; Dulpexer; SDR system; SOI process; Tunable filters;
Conference_Titel :
Microwave Symposium (AMS), 2014 1st Australian
Conference_Location :
Melbourne, VIC
DOI :
10.1109/AUSMS.2014.7017350
