DocumentCode :
2727865
Title :
Vertical metal interconnect thanks to tungsten direct bonding
Author :
Di Cioccio, Léa ; Gueguen, Pierric ; Grouiller, Etienne ; Vandroux, Laurent ; Delaye, Vincent ; Rivoire, Maurice ; Lugand, Jean François ; Clavelier, Laurent
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2010
fDate :
1-4 June 2010
Firstpage :
1359
Lastpage :
1363
Abstract :
Localized metal bonding is one of the main drivers for 3D technology implementation as it allows high vertical interconnection densities between piled up dies. In this paper we will present the direct bonding of tungsten blanket. The copper and tungsten direct bonding will be compared in terms of bonding mechanism and temperature dependence.
Keywords :
Atomic force microscopy; Bonding forces; Copper; Pollution measurement; Rough surfaces; Surface roughness; Temperature dependence; Tin; Tungsten; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2010.5490643
Filename :
5490643
Link To Document :
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