Title :
How SiGe evolved into a manufacturable semiconductor production process
Author :
Subbanne, S. ; Ahigren, D. ; Hatame, D. ; Meyerson, B.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
Over the last 10+ years, silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has matured from laboratory research efforts to become a 50/65 GHz f/sub T//f/sub max/ silicon-based 0.5 /spl mu/m BiCMOS production technology. This progress has extended silicon-based production technology into the multi-GHz and multi-Gbit/s range. This opens up an array of wireless and wired circuit and network applications and markets. SiGe circuits are now being designed in the same application space as GaAs MESFETs and HBTs, and offer the yield, cost, stability and manufacturing advantages associated with conventional silicon fabrication.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; circuit stability; heterojunction bipolar transistors; integrated circuit yield; mobile communication; semiconductor materials; 0.5 micron; 50 GHz; 65 GHz; BiCMOS production technology; SiGe; heterojunction bipolar transistor; manufacturable semiconductor production process; stability; wired circuit; wireless network applications; yield; BiCMOS integrated circuits; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; MESFETs; Production; Semiconductor device manufacture; Silicon germanium; Space technology;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759100
