Title :
A DECT transceiver chip set using SiGe technology
Author :
Bopp, M. ; Alles, Michael ; Arens, Michael ; Eichel, Dirk ; Gerlach, Stephan ; Gotzfried, R. ; Gruson, F. ; Kocks, M. ; Krimmer, G. ; Reimann, R. ; Roos, B. ; Siegle, M. ; Zieschang, J.
Author_Institution :
TEMIC Semicond. GmbH, Germany
Abstract :
A fully-integrated RF-transceiver for DECT comprises two bipolar ICs including power amplifier, low-noise amplifier and VCO. Nonblind-slot and multi-slot capability is achieved by closed-loop modulation. The complete transceiver, which operates from 2.7 to 5 V, avoids mechanical tuning, and requires <50 external components.
Keywords :
Ge-Si alloys; UHF power amplifiers; bipolar analogue integrated circuits; closed loop systems; cordless telephone systems; semiconductor materials; transceivers; voltage-controlled oscillators; 1.9 GHz; 2.7 to 5 V; DECT transceiver chip set; SiGe; VCO; bipolar ICs; closed-loop modulation; low-noise amplifier; multi-slot capability; nonblind-slot capability; power amplifier; Counting circuits; Germanium silicon alloys; Land mobile radio; Mobile communication; Phase modulation; Radio frequency; Radio transceivers; Silicon germanium; Telephony; Varactors;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759104
