DocumentCode :
2727889
Title :
Current source model of combinational logic gates for accurate gate-level circuit analysis and timing analysis
Author :
Kai Chen ; Young Hwan Kim
Author_Institution :
Dept. of Electr. & Electron. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
4
Abstract :
Many current source models (CSMs) have been proposed for the gate-level circuit analysis and timing analysis for sub-90-nm CMOS designs during the past decade. However, most of them may suffer from large delay errors for multiple-stages of combinational logic gates. This paper presents an extended CSM which can provide high accuracy in both single-stage and multiple-stage combinational logic gates. The proposed CSM consists of voltage-controlled current source, input and output parasitic capacitances, Miller capacitance and calibration input capacitance parallel to the characterized input capacitance. The calibration input capacitance helps to model the input node more accurately. In experiments, the proposed CSM outperformed the benchmark CSMs in the average root-mean squared error (RMSE) and the average 50%-to-50% gate delay error.
Keywords :
CMOS logic circuits; combinational circuits; integrated circuit design; integrated circuit modelling; logic design; logic gates; mean square error methods; CMOS designs; Miller capacitance; RMSE; average root-mean squared error; benchmark CSM; calibration input capacitance; characterized input capacitance; current source model; delay errors; extended CSM; gate delay error; gate-level circuit analysis; input node modeling; input parasitic capacitance; multiple-stage combinational logic gates; output parasitic capacitance; single-stage combinational logic gates; size 90 nm; timing analysis; voltage-controlled current source; Calibration; Capacitance; Delays; Integrated circuit modeling; Inverters; Load modeling; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-DAT.2015.7114529
Filename :
7114529
Link To Document :
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