Title :
An embedded ReRAM using a small-offset sense amplifier for low-voltage operations
Author :
Lee, Albert ; Chien-Chen Lin ; Ting-Chin Yang ; Meng-Fan Chang
Author_Institution :
Memory Design Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
This paper presents a Contact Resistive Random Access Memory (CRRAM) macro with an offset-compensated Sense amplifier for low-voltage operation. The proposed circuit aims to solve the variation and speed issues during low-voltage operations. A 256Kb test-chip was fabricated in TSMC 65nm technology. An improvement of 1.78x in read speed and 85.7% in offset was measured compared to conventional sensing methods, and the minimum operating voltage was as low as 0.3V.
Keywords :
amplifiers; low-power electronics; resistive RAM; CRRAM macro; TSMC technology; contact resistive random access memory macro; embedded ReRAM; low-voltage operation; offset-compensated sense amplifier; read speed; size 65 nm; small-offset sense amplifier; test-chip; voltage 0.3 V; Capacitors; Latches; Low voltage; Random access memory; Sensors; Transistors; Contact Resistive Random Access Memory (CRRAM); Offset compensation; Sense Amplifier (SA); low voltage;
Conference_Titel :
VLSI Design, Automation and Test (VLSI-DAT), 2015 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-DAT.2015.7114532
