DocumentCode :
2728065
Title :
Micromechanics and damage processes in interconnect structures
Author :
Hsing, A.W. ; Kearney, A.V. ; Li, L. ; Xue, J. ; Brillhart, M. ; Dauskardt, R.H.
Author_Institution :
Dept. of Mater. Sci., Stanford Univ., Stanford, CA, USA
fYear :
2010
fDate :
1-4 June 2010
Firstpage :
1303
Lastpage :
1308
Abstract :
Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.
Keywords :
Mechanical factors; Mechanical variables measurement; Metrology; Microelectronics; Packaging; Probes; Residual stresses; Silicon; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2010.5490653
Filename :
5490653
Link To Document :
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