Title : 
Micromechanics and damage processes in interconnect structures
         
        
            Author : 
Hsing, A.W. ; Kearney, A.V. ; Li, L. ; Xue, J. ; Brillhart, M. ; Dauskardt, R.H.
         
        
            Author_Institution : 
Dept. of Mater. Sci., Stanford Univ., Stanford, CA, USA
         
        
        
        
        
        
            Abstract : 
Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.
         
        
            Keywords : 
Mechanical factors; Mechanical variables measurement; Metrology; Microelectronics; Packaging; Probes; Residual stresses; Silicon; Temperature; Testing;
         
        
        
        
            Conference_Titel : 
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
         
        
            Conference_Location : 
Las Vegas, NV, USA
         
        
        
            Print_ISBN : 
978-1-4244-6410-4
         
        
            Electronic_ISBN : 
0569-5503
         
        
        
            DOI : 
10.1109/ECTC.2010.5490653