DocumentCode
272807
Title
Modeling and prediction of smart power semiconductor lifetime data using a Gaussian process prior
Author
Plankensteiner, Kathrin ; Bluder, Olivia ; Pilz, Jürgen
Author_Institution
KAI - Kompetenzzentrum fur Automobil- und Industrieelektron. GmbH, Villach, Austria
fYear
2014
fDate
7-10 Dec. 2014
Firstpage
2671
Lastpage
2681
Abstract
In automotive industry end-of-life tests are necessary to verify that semiconductor products operate reliably. Due to limited test resources it is not possible to test all devices and thus, accelerated stress tests in combination with statistical models are commonly applied to achieve reliable forecasts. Challenging thereby is the highly complex data that shows mixture distributions and censoring. For the main purpose, the extrapolation to other test conditions or designs, neither frequently used acceleration models like Arrhenius, nor complex models like Bayesian Mixtures-of-Experts or Bayesian networks give accurate lifetime predictions, although, the latter two are precise in case of interpolation. To compensate the limitations of ordinary linear based regression models, we propose the application of a Gaussian process prior. The proposed model shows a high degree of flexibility by exploiting sums or products of appropriate covariance functions, e.g. linear or exponential, and serves as a reliable alternative to currently applied methods.
Keywords
Gaussian processes; covariance analysis; power semiconductor devices; regression analysis; Gaussian process; covariance functions; ordinary linear based regression models; smart power semiconductor lifetime data; Bayes methods; Data models; Failure analysis; Predictive models; Reliability; Semiconductor device measurement; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation Conference (WSC), 2014 Winter
Conference_Location
Savanah, GA
Print_ISBN
978-1-4799-7484-9
Type
conf
DOI
10.1109/WSC.2014.7020111
Filename
7020111
Link To Document