A fully integrated 3.1-10.6-GHz Ultra-Wideband Low Noise Amplifier for UWB Applications

Author

EL-Gharniti, Ouail ; Kerhervé, Eric ; Bégueret, Jean-Baptiste ; Belot, Didier

Author_Institution

Microelectron. IXL Lab., Bordeaux Univ.

fYear

2006

fDate

38869

Firstpage

1

Lastpage

4

Abstract

This paper presents a fully integrated ultra-wideband 3.1-10.6 GHz low noise amplifier (LNA) in a standard 0.25 mum SiGe BiCMOS process. The LNA circuit is a cascade topology with inductively degeneration transistor. A new input impedance matching network based on monolithic transformers was proposed to overcome to the problem of broadband matching without degrading the noise performance and power delivery. The LNA achieves a flat power gain of 14.32dB with an input matching of -9dB over the band, a minimum noise figure (NF) of 2.4-5.7dB across the entire bandwidth, while consuming 9.54mW at 1.8V supply

Keywords

BiCMOS integrated circuits; Ge-Si alloys; impedance matching; low noise amplifiers; monolithic integrated circuits; 0.25 micron; 1.8 V; 14.32 dB; 2.4 to 5.7 dB; 3.1 to 10.6 GHz; 9.54 mW; BiCMOS process; SiGe; UWB applications; inductively degeneration transistor; input impedance matching network; monolithic transformers; ultra wideband low noise amplifier; BiCMOS integrated circuits; Broadband amplifiers; Circuit topology; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Network topology; Silicon germanium; Transformers; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006 IEEE North-East Workshop on

Conference_Location

Gatineau, Que.

Print_ISBN

1-4244-0416-9

Electronic_ISBN

1-4244-0417-7

Type

conf

DOI

10.1109/NEWCAS.2006.250928

Filename

4016959