Title :
A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technology
Author :
Imamiya, K. ; Sugiura, Yuta ; Nakamura, Hajime ; Himeno, T. ; Takeuchi, Ken ; Ikehashi, Tamio ; Kanda, K. ; Hosono, Keita ; Shirota, Riichiro ; Aritome, Seiichi ; Shimizu, Kazuo ; Hatakeyama, Kazuo ; Sakui, Koji
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
Higher density flash memories for mass storage are attractive for application in the audio-video field, for example, in digital cameras and for voice recording. A 100 MB Flash records one hour CD-quality music. Improvements in video compression techniques are expected to realize gigabyte flash, enabling movies on silicon in the near future; a development that is expected to lead to rapidly rising demand for high-density flash. Both the low bit cost due to the small cell size and the high program and read performance are important factors for the high density flash. A NAND flash has potential advantages in those respects. Shallow trench isolation (STI) shrinks bit line pitch to 73% of that in the case of conventional LOCOS isolation, enabling 0.29 um/sup 2/ cell 0.25 /spl mu/m design rules. The 129.76 mm/sup 2/ chip is made possible by using NAND type memory cell and STI.
Keywords :
NAND circuits; VLSI; cellular arrays; flash memories; integrated circuit design; isolation technology; 0.25 micron; 256 Mbit; NAND flash; audio-video field; bit line pitch; cell size; design rules; mass storage; program performance; read performance; shallow trench isolation technology; Audio recording; CD recording; Costs; Digital cameras; Digital recording; Flash memory; Motion pictures; Silicon; Video compression; Video recording;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759157