Title :
An SOI 0.6 mV offset temperature-compensated Hall sensor readout IC for automotive applications up to 200/spl deg/C
Author :
Kordas, N. ; Derksen, S. ; Fiedler, H.-L. ; Schmidt, Martin ; Yasujima, A. ; Matsui, Masaki ; Nagano, Shigeo ; Ishibashi, Koji
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
A Hall sensor readout IC operating over a temperature range up to 200/spl deg/C is fabricated using a thin-film SIMOX process. The circuit operates as a time continuous magnetically activated switch. To compensate the temperature dependent sensitivity of the Hall plate, the comparator thresholds have a defined temperature dependence. An on-chip voltage regulator supplies the bias voltage to the Hall plate. The 6 to 30 V supply range and the 200/spl deg/C external temperature range make the IC well suited for automotive applications.
Keywords :
Hall effect transducers; SIMOX; automotive electronics; comparators (circuits); compensation; readout electronics; 0 to 200 degC; 0.6 mV; 6 to 30 V; SOI; Si; automotive applications; bias voltage; comparator thresholds; defined temperature dependence; on-chip voltage regulator; sensor readout IC; temperature dependent sensitivity; temperature-compensated Hall sensor; thin-film SIMOX process; time continuous magnetically activated switch; Magnetic circuits; Magnetic sensors; Switches; Switching circuits; Temperature dependence; Temperature distribution; Temperature sensors; Thin film circuits; Thin film sensors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759162
