An SOI 0.6 mV offset temperature-compensated Hall sensor readout IC for automotive applications up to 200/spl deg/C

Author

Kordas, N. ; Derksen, S. ; Fiedler, H.-L. ; Schmidt, Martin ; Yasujima, A. ; Matsui, Masaki ; Nagano, Shigeo ; Ishibashi, Koji

Author_Institution

Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany

fYear

1999

fDate

17-17 Feb. 1999

Firstpage

134

Lastpage

135

Abstract

A Hall sensor readout IC operating over a temperature range up to 200/spl deg/C is fabricated using a thin-film SIMOX process. The circuit operates as a time continuous magnetically activated switch. To compensate the temperature dependent sensitivity of the Hall plate, the comparator thresholds have a defined temperature dependence. An on-chip voltage regulator supplies the bias voltage to the Hall plate. The 6 to 30 V supply range and the 200/spl deg/C external temperature range make the IC well suited for automotive applications.

Keywords

Hall effect transducers; SIMOX; automotive electronics; comparators (circuits); compensation; readout electronics; 0 to 200 degC; 0.6 mV; 6 to 30 V; SOI; Si; automotive applications; bias voltage; comparator thresholds; defined temperature dependence; on-chip voltage regulator; sensor readout IC; temperature dependent sensitivity; temperature-compensated Hall sensor; thin-film SIMOX process; time continuous magnetically activated switch; Magnetic circuits; Magnetic sensors; Switches; Switching circuits; Temperature dependence; Temperature distribution; Temperature sensors; Thin film circuits; Thin film sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-5126-6

Type

conf

DOI

10.1109/ISSCC.1999.759162

Filename

759162