DocumentCode :
2728928
Title :
Electronics of single-wall carbon nanotubes
Author :
Johnson, Arthur T.
Author_Institution :
Pennsylvania Univ., Philadelphia, PA, USA
fYear :
1999
fDate :
17-17 Feb. 1999
Firstpage :
210
Lastpage :
211
Abstract :
Device miniaturization has been a focus since the invention of the integrated circuit, with current industrial plans for MOSFETs with 70 nm channels. Anticipating yet smaller critical dimensions, physicists and chemists are exploring nanometer-scale devices based on semiconductors and single molecules. The small size of molecular electronic circuitry has profound device implications. Ballistic electron transport over nanometer distances allows THz switching speeds, and novel device architectures based on quantum effects and electron charging are conceivable. Only recently, a room temperature single-molecule device was demonstrated, a transistor made from a single-wall carbon nanotube (SWNT). This is the first of a new class of molecular circuits with potential for significant impact. Here, focus is on progress in SWNT molecular transistors and quantum effect single-electron transistors (SETs).
Keywords :
carbon nanotubes; high field effects; molecular electronics; nanotechnology; single electron transistors; C; SWNT; ballistic electron transport; critical dimensions; device architectures; electron charging; molecular electronic circuitry; molecular transistors; nanometer-scale devices; quantum effects; room temperature single-molecule device; single-electron transistors; single-wall carbon nanotubes; terahertz switching speeds; Carbon nanotubes; Electrons; Image resolution; Microscopy; Nanostructures; Probes; Semiconductivity; Shape; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
0-7803-5126-6
Type :
conf
DOI :
10.1109/ISSCC.1999.759197
Filename :
759197
Link To Document :
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