DocumentCode
2729011
Title
Silicon quantum dots in microdisk resonators: Stress-engineering of disk core for q-factor tuning and enhancement
Author
Ghulinyan, M. ; Pitanti, A. ; Xie, M. ; Navarro-Urrios, D. ; Lui, A. ; Pucker, G. ; Pavesi, L.
Author_Institution
Adv. Photonics & Photovoltaics, Fondazione Bruno Kessler, Trento, Italy
fYear
2009
fDate
June 28 2009-July 2 2009
Firstpage
1
Lastpage
4
Abstract
We report on visible light emission from Si quantum dot (QD)-based optically active microdisk resonators with highest quality factors of up to 7000 at visible wavelengths, where Si QDs absorb strongly. Generally, contributions from various loss channels within optically active micro-resonator devices lead to limited spectral windows, referred to as Q-bands, where highest mode Q-factors manifest. Here we describe a strategy for tuning Q-bands using a new class of micro-resonators, in which engineered stress within an initially flat disk results in either concave or convex devices after post formation. To shift the Q-band by 60nm towards short wavelengths in conventional flat micro-disks, for example, a 50% diameter reduction is required, which causes severe radiative losses, suppressing Q´s. With our bent devices we achieve similar tuning and even higher Q´s by two orders of magnitude smaller diameter modification (0.4%). The phenomenon relies on geometry-induced smart interplay between modified dispersions of material absorption and radiative loss-related Q-factors. Importantly, this tuning scheme does not require larger device sizes, but rather utilizes self-adjustment properties of originally stressed resonator core. Remarkably, the bent resonators benefit from unmodified free-spectral range and cleaner WGM spectra due to the absence of higher order mode families.
Keywords
laser tuning; microcavity lasers; microdisc lasers; photoluminescence; quantum dot lasers; silicon; stress effects; stress-strain relations; Q-factor tuning; Si; disk core stress engineering; material absorption; microdisk resonator; modified dispersion; optically active microresonator; silicon quantum dots; visible light emission; whispering gallery modes; Absorption; Optical devices; Optical losses; Optical resonators; Optical tuning; Q factor; Quantum dots; Silicon; Stimulated emission; Stress; micro-resonators; photoluminescence; silicon nanocrystals; whispering-gallery modes;
fLanguage
English
Publisher
ieee
Conference_Titel
Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on
Conference_Location
Azores
Print_ISBN
978-1-4244-4825-8
Electronic_ISBN
978-1-4244-4827-2
Type
conf
DOI
10.1109/ICTON.2009.5185144
Filename
5185144
Link To Document