DocumentCode
2729072
Title
High temperature resistant bonding solutions enabling thin wafer processing (Characterization of polyimide base temporary bonding adhesive for thinned wafer handling)
Author
Itabashi, Toshiaki ; Zussman, Melvin P.
Author_Institution
KSP R&D D342, DuPont WLP Solutions, Kawasaki, Japan
fYear
2010
fDate
1-4 June 2010
Firstpage
1877
Lastpage
1880
Abstract
Recent advanced devices including packaging and substrates required smart solution for wafer thinning and handling techniques. In addition to 3D-TSV packages, CIS, SiP, power devices, MEMS and SI interposer technologies require thinned substrates without any damage during processing or handling. On the other hand, existing thinning and handling technologies face difficulties when high process temperatures or aggressive chemicals are used in processes for via formation, insulation, via filling and re-routings. We propose the use of high temperature- and chemical-resistant polyimides as both temporary and permanent bonding adhesives in a process sequence called “transfer bonding”; this technology eliminates the difficulty of handling thinned substrates. This paper describes details of the bonding process, several techniques for de-bonding and the potential for applying this technology to manufacture of multiple types of advanced devices.
Keywords
Chemical processes; Chemical technology; Computational Intelligence Society; Filling; Insulation; Micromechanical devices; Packaging; Polyimides; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490702
Filename
5490702
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