DocumentCode
2729125
Title
Lattice deformation of Sn nanowires for the application to nano-interconnection technology
Author
Shin, Ho Sun ; Song, Jae Yong ; Yu, Jin
Author_Institution
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2010
fDate
1-4 June 2010
Firstpage
1861
Lastpage
1865
Abstract
Nano-interconnection technology is expected to replace some part of solder bump technology of electronic packaging in near future. Metallic nanowires (NWs) are one of the candidates for the electrical interconnection materials. In this study, as a well-known material for the interconnection in the electronic packaging, Sn was selected for the application to nano-interconnection technology. Since the physical properties of Sn NWs are important for the interconnection applications, we have already reported the size-dependency of melting behaviors and lattice parameters of single crystalline Sn NWs. In this study, the effects of the NW microstructure and the kinds of templates, which were used for the growth of Sn NWs, on the lattice parameter were investigated. Results showed that the single crystalline Sn NWs were elongated along the longitudinal direction up to 0.64 % depending upon their microstructures and kinds of the templates. The nanowire elongation was gradually reduced when the NW microstructure were single crystalline, granular, and bamboolike structures, in sequence.
Keywords
Crystal microstructure; Crystallization; Electronics packaging; Lattices; Materials science and technology; Nanowires; Thermal stresses; Tin; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490706
Filename
5490706
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