• DocumentCode
    2729190
  • Title

    Intermetallic Cu3Sn as oxidation barrier for fluxless Cu-Sn bonding

  • Author

    Liu, H. ; Wang, K. ; Aasmundtveit, K. ; Hoivik, N.

  • Author_Institution
    Inst. of Microsyst. Technol., Vestfold Univ. Coll., Borre, Norway
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    853
  • Lastpage
    857
  • Abstract
    A fluxless Cu/Sn SLID bonding process was demonstrated by using intermetallic Cu3Sn layer as the oxidation barrier for Cu interconnects. Oxidation behavior of intermetallic Cu3Sn was confirmed by aging Cu and multilayer Cu/Cu3Sn films at elevated temperatures in ambient air, and measuring the oxidation level by energy dispersive x-ray microscopy (EDX). The strength of bonded interconnects were characterized by shear testing, and found to be comparable to conventionally SLID bonded interconnects. Furthermore, the interdiffusion process of elemental Cu and Sn in the bonding region is discussed.
  • Keywords
    Aging; Bonding processes; Dispersion; Energy measurement; Intermetallic; Microscopy; Nonhomogeneous media; Oxidation; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490709
  • Filename
    5490709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2729190