Title :
Thermal stability of the dielectric properties of the low-loss, organic material RT/duroid 6002 from 30 GHz to 70 GHz
Author :
Morcillo, Carlos Donado ; Bhattacharya, Swapan K. ; Horn, Allen ; Papapolymerou, John
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
For the first time, the thermal stability of the dielectric properties, i.e. the relative permittivity and the loss tangent, are presented for RT/duroid® 6002 from 30 GHz to 70 GHz over the temperature range between 20°C and 200°C, using the microstrip ring resonator method at two different microstrip impedances. High-frequency-resolution, Multiline TRL calibrations were performed at each temperature point to increase the accuracy of the measurements. Measurements show a remarkably-stable normalized temperature coefficient of the relative permittivity of -17.6 ppm/°C across the entire bandwidth. Likewise, the normalized loss tangent temperature coefficient had a value of about 0.00118°C-1, with little variations throughout the measurement bandwidth.
Keywords :
organic semiconductors; permittivity; thermal stability; RT/Duroid 6002; dielectric properties; frequency 30 GHz to 70 GHz; high-frequency-resolution; low-loss organic material; microstrip impedances; microstrip ring resonator method; multiline TRL calibrations; normalized loss tangent temperature coefficient; relative permittivity; temperature 20 C to 200 C; thermal stability; Bandwidth; Calibration; Dielectric losses; Impedance; Microstrip resonators; Optical ring resonators; Organic materials; Permittivity measurement; Temperature distribution; Thermal stability;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2010.5490714