Title :
Using Probing Techniques to Identify and Study High Leakage Issues in the Development of 90nm Process and Below
Author :
Hendarto, E. ; Mai, Zicong ; Tan, P.K. ; Lek, A. ; Lau, B. ; Lam, J. ; Chim, W.K.
Author_Institution :
Dept. of Technol. Dev., Chartered Semicond. Mfg Ltd, Singapore
Abstract :
The combined use of scanning probe microscope based techniques, namely conductive atomic force microscopy (C-AFM) and tunneling atomic force microscopy (TUNA), and nanoprobing technique is presented. In 90 nm process and below, C-AFM identifies leakage by current mapping, while TUNA measures the current-voltage (I-V) curves of different contacts to study the integrity of individual contacts. Nanoprobing is used to obtain and compare the I-V characteristics of good and leaky transistors
Keywords :
atomic force microscopy; leakage currents; nanoelectronics; C-AFM; TUNA; conductive atomic force microscopy; current mapping; current-voltage measurement; high leakage issues; nanoprobing technique; scanning probe microscope; tunneling atomic force microscopy; Atomic force microscopy; Atomic measurements; Current measurement; Failure analysis; Nanoscale devices; Photonic crystals; Probes; Scanning electron microscopy; Transistors; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.250997
