Title :
A Study of Asymmetrical Behaviour in Advanced Nano SRAM Devices
Author :
Lin, Hung-Sung ; Chang, Wen-Tung ; Chen, Chun-Lin ; Huang, Tsui-Hua ; Chiang, Vivian ; Chen, Chun-Ming
Author_Institution :
United Microelectron. Corp. Ltd., Hsinchu
Abstract :
The importance of understanding asymmetrical behaviour in SRAM has increased as the technology node shrinks below 100 nm. Single bit failure can possibly be caused by the malfunction of any of the six transistors in a standard SRAM cell. In order to understand the asymmetrical behaviour in advanced nano SRAM devices, nanoprobing is introduced to perform transistor level fault isolation prior to attempting physical failure analysis (PFA)
Keywords :
SRAM chips; failure analysis; nanoelectronics; nano SRAM devices; nanoprobing; physical failure analysis; single bit failure; transistor level fault isolation; Circuit faults; Failure analysis; Isolation technology; Nanoscale devices; Random access memory; Scanning electron microscopy; Transistors; Transmission electron microscopy; Vehicles; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.250998
