Non-Classical Hot-Electron Gate Current in the Deep Submicrometer N-MOS Flash Memory Cell

In this paper, experimental features of a non-classical hot-electron gate current I_g ^e obtained under V_b = 0, similar to those reported earlier under reverse V_b are presented. To the best of our knowledge, this is the first direct observation of this non-classical I_g ^e component in deep submicrometer N-channel MOSFET under conventional CHE biasing, i.e. when V_g ap V_d and V_b = 0. Based on the results, a phenomenological explanation as well as some further supporting experimental evidence is also presented here