• DocumentCode
    2729455
  • Title

    Three dimensional air-gap structures for MEMS packaging

  • Author

    Saha, Rajarshi ; Fritz, Nathan ; Bidstrup-Allen, Sue Ann ; Kohl, Paul A.

  • Author_Institution
    Sch. of Chem. & Biomol. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    811
  • Lastpage
    815
  • Abstract
    Air-gap structures are of interest in a range of microelectronic applications especially in microelectromechanical systems (MEMS). In this work, we investigate the application of an unique trimaterial for MEMS packaging composed of polypropylene carbonate (PPC) as a sacrificial material, a photosensitive, hybrid inorganic/organic dielectric epoxycyclohexyl polyhedral oligomeric silsesquioxanes (POSS) as the overcoat material, and Al/Cr-Cu thin metal film as a hermetic seal. POSS was used both for patterning the PPC over the structures as well as a stable overcoat material thus reducing the complexity of the fabrication process. A wide range of device sizes and structures (from 20 × 100 µm to 600 × 1000 µm) were fabricated and the processing protocol was found to be compliant over these size/structure variations. Metal adhesion on the overcoat was substantially improved by using low power oxygen plasma for short durations. Cavity-strength was evaluated for different metals and thicknesses. An increase of 5.6 times in cavity-strength was observed for a thicker (3X) Al metal film. Current work is focused on implementing the wafer-level air-cavity package into a lead frame packaged MEMS device through injection and compression molding techniques.
  • Keywords
    Air gaps; Dielectric materials; Inorganic materials; Microelectromechanical systems; Microelectronics; Micromechanical devices; Organic materials; Packaging; Sealing materials; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490722
  • Filename
    5490722