• DocumentCode
    2729505
  • Title

    Thermal Reliability of Cu/low -κ(Black-DiamondTM, BD) Interconnects on Flexible Organic Substrate

  • Author

    Li, H.Y. ; Bai, J.S. ; Chua, H.M. ; Guo, L.H. ; Lo, G.Q.

  • Author_Institution
    Inst. of Microelectron., Singapore
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    This paper reports burn-in test results of Cu/low-K (BD) interconnects on flexible organic substrate (FR-4,0.1mm) and Si substrate. The electrical yields of via chains (via number: 11,182, via size: 0.26 to 0.5 mum) onto flexible organic substrate remain more than 50% and surviving via chains exhibit average resistance shift of 7.3% which is comparable to Si substrate (6.8%) after 524hrs (388hrs/75degC and 136hrs/150degC) burn-in tests
  • Keywords
    copper; cryogenic electronics; integrated circuit interconnections; integrated circuit reliability; silicon; Cu; Si; burn in test; electrical yields; low-k interconnects; resistance shift; thermal reliability; Buffer layers; CMOS technology; Electronic equipment testing; Etching; Flexible electronics; Integrated circuit interconnections; Microelectronics; Silicon on insulator technology; Substrates; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0205-0
  • Electronic_ISBN
    1-4244-0206-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2006.251010
  • Filename
    4017035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2729505