Title :
Study on Potassium Contamination in SOI Wafer Fabrication Using Dynamic SIMS
Author :
Gui, D ; Hua, Y.N. ; Xing, X.Z. ; Zhao, S.P.
Author_Institution :
Chartered Semicond. Mfg. Ltd., Singapore
Abstract :
In this paper, a case study of BIST failure in SOI wafer fabrication was presented. With optimized charge neutralization using a well-controlled normal incident electron beam, a reliable depth distribution of K in the ILD was obtained which is helpful to understand the source of K contamination. From the SIMS and EDX results, the root cause was concluded to be K contamination introduced by the CMP slurry. The yield has been improved greatly by depositing a layer of high density oxide on the top of ILD to block the K contamination
Keywords :
X-ray chemical analysis; contamination; potassium; secondary ion mass spectroscopy; semiconductor device manufacture; silicon-on-insulator; BIST failure; CMP slurry; EDX; K; SIMS; SOI wafer fabrication; charge neutralization; depth distribution; potassium contamination; Built-in self-test; CMOS integrated circuits; CMOS technology; Contamination; FETs; Fabrication; High speed integrated circuits; Integrated circuit noise; Isolation technology; Silicon on insulator technology;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251014
