Fabrication and characterization of Er-doped Silicon-Rich Oxide toroidal microcavities on chip

Author

Jager, J.B. ; Noe, P. ; Picard, E. ; Delamadeleine, E. ; Calvo, V.

Author_Institution

Lab. SINAPS, CEA-Grenoble MINATEC, Grenoble, France

fYear

2009

fDate

June 28 2009-July 2 2009

Firstpage

1

Lastpage

3

Abstract

The fabrication process of Ultrahigh-Q toroidal microcavities and integration of erbium-doped silicon-rich oxide thin film inside these structures are reported. Using micro-photoluminescence setup, we achieve selective detection of whispering gallery modes at room temperature. Quality factors as high as 3200 are measured, limited by the setup resolution.

Keywords

Q-factor; erbium; infrared sources; integrated optics; micro-optics; microcavities; optical fabrication; photoluminescence; silicon compounds; thin films; whispering gallery modes; SiO:Er-SiO₂; erbium-doped silicon-rich oxide thin film; infrared sources; integrated optics; micro-photoluminescence; microcavity fabrication; quality factors; room temperature detection; temperature 293 K to 298 K; toroidal microcavities-on-chip; ultrahigh-Q toroidal microcavities; whispering gallery modes; Erbium; Etching; Microcavities; Optical device fabrication; Optical films; Semiconductor thin films; Silicon compounds; Stimulated emission; Substrates; Whispering gallery modes; Toroidal microcavity; erbium; infrared sources; integrated optics; whispering gallery modes;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2009. ICTON '09. 11th International Conference on

Conference_Location

Azores

Print_ISBN

978-1-4244-4825-8

Electronic_ISBN

978-1-4244-4827-2

Type

conf

DOI

10.1109/ICTON.2009.5185174

Filename

5185174