• DocumentCode
    2729606
  • Title

    Failure analysis of shallow trench isolated ESD structures

  • Author

    Never, James M. ; Voldman, Steven H.

  • Author_Institution
    Microelectron. Div., IBM Corp., Essex Junction, VT, USA
  • fYear
    1995
  • fDate
    12-14 Sept. 1995
  • Firstpage
    273
  • Lastpage
    288
  • Abstract
    Scanning-electron microscopes and atomic-force microscopes are used to analyze surface and sub-surface ESD-induced failure mechanisms in 0.25- and 0.5-/spl mu/m shallow trench isolated CMOS technology ESD structures and n-channel MOSFETs; ESD failure-mechanism types are characterized and classified; and additional failure-analysis techniques and tools are discussed.
  • Keywords
    CMOS integrated circuits; atomic force microscopy; electrostatic discharge; failure analysis; integrated circuit technology; isolation technology; scanning electron microscopy; 0.25 micron; 0.50 micron; CMOS technology; ESD failure analysis; atomic force microscopy; n-channel MOSFETs; scanning electron microscopy; shallow trench isolation; CMOS technology; Electrostatic discharge; Failure analysis; Isolation technology; MOSFETs; Microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
  • Conference_Location
    Phoenix, AZ, USA
  • Print_ISBN
    1-878303-59-7
  • Type

    conf

  • DOI
    10.1109/EOSESD.1995.478295
  • Filename
    478295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2729606