Title :
Quantifying ESD/EOS latent damage and integrated circuit leakage currents
Author :
Song, Miryeong ; Eng, David C. ; MacWilliams, Kenneth P.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
Abstract :
The correlation of IC leakage current with ESD/EOS latent damage is studied. Quantification of latent damage as a function of leakage current is determined for the two primary ESD/EOS latent damage mechanisms. This relationship explicitly shows the reduction in lifetime with ESD/EOS damage (type dependent) and also offers the possibility for a simple screening procedure for latent damage.
Keywords :
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit reliability; leakage currents; ESD/EOS latent damage; IC leakage current; integrated circuit leakage currents; screening procedure; Earth Observing System; Electrostatic discharge; Leakage current;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
1-878303-59-7
DOI :
10.1109/EOSESD.1995.478298
