DocumentCode
2729647
Title
Effects of Annealing and Temperature on SGOI Fabrication Using Ge Condensation
Author
Balakumar, S. ; Ong, C.S. ; Tung, C.H. ; Trigg, A. ; Li, M.-F. ; Kumar, R. ; Lo, G.Q. ; Balasubramanian, N. ; Yeo, Y.C. ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., Singapore
fYear
2006
fDate
3-7 July 2006
Firstpage
150
Lastpage
153
Abstract
In this work, we investigate the effects of oxidation temperature and annealing on Ge movement, and amorphization as an undesirable consequence of inappropriate lowering of temperature during Ge condensation. Possible mechanisms, solutions and implications are presented and it is shown that SiGe with up to 60% Ge can be obtained with oxidation and annealing at a high temperature of 1050degC
Keywords
Ge-Si alloys; amorphisation; annealing; condensation; high-temperature electronics; oxidation; silicon-on-insulator; 1050 C; SGOI fabrication; SiGe; amorphization; annealing; condensation; oxidation; temperature effects; Amorphous materials; Annealing; Atomic force microscopy; Fabrication; Germanium silicon alloys; MOSFETs; Oxidation; Silicon germanium; Silicon on insulator technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.251018
Filename
4017043
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