Title :
Effects of Annealing and Temperature on SGOI Fabrication Using Ge Condensation
Author :
Balakumar, S. ; Ong, C.S. ; Tung, C.H. ; Trigg, A. ; Li, M.-F. ; Kumar, R. ; Lo, G.Q. ; Balasubramanian, N. ; Yeo, Y.C. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
In this work, we investigate the effects of oxidation temperature and annealing on Ge movement, and amorphization as an undesirable consequence of inappropriate lowering of temperature during Ge condensation. Possible mechanisms, solutions and implications are presented and it is shown that SiGe with up to 60% Ge can be obtained with oxidation and annealing at a high temperature of 1050degC
Keywords :
Ge-Si alloys; amorphisation; annealing; condensation; high-temperature electronics; oxidation; silicon-on-insulator; 1050 C; SGOI fabrication; SiGe; amorphization; annealing; condensation; oxidation; temperature effects; Amorphous materials; Annealing; Atomic force microscopy; Fabrication; Germanium silicon alloys; MOSFETs; Oxidation; Silicon germanium; Silicon on insulator technology; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251018
