DocumentCode :
2729679
Title :
Inductance Considerations of on-Chip Interconnections for Best Electrostatic Discharge Protection Performance
Author :
Sofer, Sergey ; Fefer, Yefim ; Shapira, Yoram
Author_Institution :
Freescale Semicond. Israel Ltd., Herzelia
fYear :
2006
fDate :
3-7 July 2006
Firstpage :
158
Lastpage :
162
Abstract :
The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design
Keywords :
electrostatic discharge; inductance; integrated circuit design; integrated circuit interconnections; system-on-chip; electrostatic discharge protection; inductance considerations; on-chip interconnections; resonating oscillations; voltage resonant effects; Clamps; Electrostatic discharge; Inductance; Integrated circuit interconnections; MOSFET circuits; Protection; Resonance; Semiconductor device manufacture; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
Type :
conf
DOI :
10.1109/IPFA.2006.251020
Filename :
4017045
Link To Document :
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