DocumentCode :
2729795
Title :
Low-power design of high-capacitive CMOS circuits using a new charge sharing scheme
Author :
Khellah, Muhammad M. ; Elmasry, M.I.
Author_Institution :
Waterloo Univ., Ont., Canada
fYear :
1999
fDate :
17-17 Feb. 1999
Firstpage :
286
Lastpage :
287
Abstract :
In CMOS ICs, reducing V/sub DD/ reduces dynamic power quadratically since P/sub dynamic/=/spl alpha/C/sub L/V/sub DD/V/sub swing/f. However, without a corresponding decrease in the threshold voltage V/sub TH/, the delay increases rapidly particularly for large C/sub L/. Decreasing V/sub TH/, on the other hand, leads to large leakage currents. Another method to decrease P/sub dynamic/ without sacrificing delay is to decrease V/sub swing/. A charge sharing model, HiCapCS, is used to reduce V/sub swing/ on heavily-loaded lines in dynamic CMOS circuits.
Keywords :
CMOS digital integrated circuits; delays; integrated circuit design; integrated circuit modelling; leakage currents; low-power electronics; HiCapCS; charge sharing model; charge sharing scheme; delay; dynamic CMOS circuits; dynamic power; heavily-loaded lines; high-capacitive CMOS circuits; leakage currents; low-power design; threshold voltage; Capacitance; Capacitors; Circuit simulation; Decoding; Delay; Leakage current; Logic; Read only memory; Semiconductor device modeling; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
0-7803-5126-6
Type :
conf
DOI :
10.1109/ISSCC.1999.759257
Filename :
759257
Link To Document :
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