DocumentCode
2729800
Title
Effect of Ag grain size on high temperature joint formation in Ag-In system
Author
Wang, Pin J. ; Sha, Chu-Hsuan ; Lee, Chin C.
Author_Institution
Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA
fYear
2010
fDate
1-4 June 2010
Firstpage
781
Lastpage
788
Abstract
After many experiments in developing fluxless Ag-In joints, we realize that the success of producing a joint relates to microstructure of the Ag layer. Ag with small grains results in rapid growth of solid Ag2 In intermetallic compounds through grain boundary diffusion. Thus, a joint is not obtained because of lack of molten phase, (L). To coarsen Ag grains, an annealing step is added to the Ag-plated Cu substrate. This step makes Ag grains 200 times coarser compared to the as-plated Ag. The coarsened microstructure slows down the Ag2 In growth. Consequently, the (L) phase stays at molten state with sufficient time to react with the Ag layer on Si chip to produce a joint. Nearly perfect joints are produced on Ag-plated Cu substrates. The resulting joints consist of pure Ag, Ag-rich solid solution, Ag2 In, and Ag3 In. The melting temperature exceeds 650°C. Using the present process, high temperature joints of high thermal conductivity are made between Si chips and Cu substrates at low bonding temperature (200°C). We foresee the Ag-In system as an important system to explore for various fluxless bonding applications. This system provides the possibilities of producing joints of wide composition choices and wide melting temperature range. Present study provides preliminary but useful information on how the microstructure of Ag affects the bonding results.
Keywords
Annealing; Bonding; Conducting materials; Copper; Electrodes; Grain size; Microstructure; Solids; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490745
Filename
5490745
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