DocumentCode :
2729824
Title :
Simulation of microstructure defects creep on nickel-based superalloys by Genetic Algorithm
Author :
Lei, Meng ; Shu, Zhang
Author_Institution :
Shenyang Normal Univ., Shenyang, China
Volume :
1
fYear :
2009
fDate :
20-22 Nov. 2009
Firstpage :
327
Lastpage :
330
Abstract :
Based on finite element method and genetic algorithms dynamic mathematical model is established, and the simulation of stress distribution around the defects of single crystal nickel-based superalloysis also established with ANSYS. After the change of stress field with time is analyzed, the result is compared with that achieved through numerical calculation and experimental analysis. The comparison shows that the combination of Finite element method and genetic algorithm is an effective way to micro-simulation. a model is established and simulated for nickel-based superalloys by finite element Method tool, the paper also analysis the stress field of microstructure defects. An Optimization Method is used to the Simulation by Genetic Algorithm, and the results are compared with experimental analysis. The comparison shows the model and Algorithm are correct and can provide basis for the study of creep features and microstructure evolution.
Keywords :
cracks; creep; crystal defects; crystal microstructure; finite element analysis; fracture; genetic algorithms; inclusions; nickel alloys; superalloys; cracks; creep; finite element method; fracture; genetic algorithm dynamic mathematical model; holes; inclusions; micro-simulation; microstructure defects; optimization method; single crystal nickel-based superalloys; stress distribution; stress field; Algorithm design and analysis; Analytical models; Creep; Differential equations; Finite element methods; Genetic algorithms; Grain boundaries; Microstructure; Partial differential equations; Stress; FEM analysis; Genetic Algorithm; Simulation; nickel-based superalloys;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent Computing and Intelligent Systems, 2009. ICIS 2009. IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-4754-1
Electronic_ISBN :
978-1-4244-4738-1
Type :
conf
DOI :
10.1109/ICICISYS.2009.5357835
Filename :
5357835
Link To Document :
بازگشت