Title :
An integrated 800/spl times/600 CMOS imaging system
Author :
Woodward Yang ; Oh-Bong Kwon ; Ju-Il Lee ; Gyu-Tae Hwang ; Suk-Joong Lee
Author_Institution :
Harvard Univ., Cambridge, MA, USA
Abstract :
Using a 0.5 /spl mu/m baseline DRAM process, a single chip digital CMOS imaging system with SVGA pixel array, linear bank of 800 parallel 8 b ADCs, 3.2 kB DRAM buffer, digital double sampling (DDS) circuitry and digital control is presented. A 3.3 V high-performance 4T nMOS, 8/spl times/8 /spl mu/m/sup 2/ pixel with on-chip RGB Bayer pattern color filters has measured green sensitivity >2 V/lux-s and dark current <25 pA/cm/sup 2/ at 25/spl deg/C. The chip is 7.6/spl times/8.6 mm/sup 2/ with 47% die efficiency, integrates over 2.2 M transistors, operates on a single 3.3 V power supply, and consumes <100 mW at 80 frame/s. The CMOS digital imaging system is packaged in a standard 20-pin cerDIP with quartz lid and implements programmable exposure time, RGB channel ADC gains and analog bias voltages and fixed pattern noise (FPN) cancellation and readout modes for image window panning and sizing.
Keywords :
CMOS image sensors; analogue-digital conversion; dark conductivity; integrated circuit packaging; programmable circuits; 0.5 micron; 100 mW; 25 degC; 3.2 KB; 3.3 V; 8 bit; ADCs; CMOS imaging system; DRAM buffer; RGB Bayer pattern color filters; SVGA pixel array; baseline DRAM process; cerDIP; dark current; digital control; digital double sampling; fixed pattern noise; green sensitivity; image window panning; programmable exposure time; readout modes; CMOS digital integrated circuits; CMOS process; Current measurement; Digital control; Filters; Integrated circuit measurements; MOS devices; Pixel; Sampling methods; Semiconductor device measurement;
Conference_Titel :
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5126-6
DOI :
10.1109/ISSCC.1999.759261