Title :
TEM application in the failure analysis of advanced 90 nm SOI-based IC devices
Author :
Li, K. ; Er, E. ; Zhao, S.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here
Keywords :
failure analysis; integrated circuit reliability; integrated circuit testing; silicon-on-insulator; transmission electron microscopy; 90 nm; failure analysis; integrated circuits; silicon-on-insulator; transmission electron microscopy; Application specific integrated circuits; Chemical analysis; Circuit testing; Erbium; Failure analysis; High speed integrated circuits; Hydrogen; Pulp manufacturing; Silicon on insulator technology; Wafer bonding;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
DOI :
10.1109/IPFA.2006.251031
