DocumentCode :
2729899
Title :
TEM application in the failure analysis of advanced 90 nm SOI-based IC devices
Author :
Li, K. ; Er, E. ; Zhao, S.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
fYear :
2006
fDate :
3-7 July 2006
Firstpage :
205
Lastpage :
208
Abstract :
The adoption of SOI structure into 90 nm IC devices makes the characterization very challenging. TEM characterization becomes more critical, challenging and indispensable in the failure analysis of such devices. To illustrate the application of TEM in this area, several unique examples including both cross-sectional and planar analysis are given here
Keywords :
failure analysis; integrated circuit reliability; integrated circuit testing; silicon-on-insulator; transmission electron microscopy; 90 nm; failure analysis; integrated circuits; silicon-on-insulator; transmission electron microscopy; Application specific integrated circuits; Chemical analysis; Circuit testing; Erbium; Failure analysis; High speed integrated circuits; Hydrogen; Pulp manufacturing; Silicon on insulator technology; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
Type :
conf
DOI :
10.1109/IPFA.2006.251031
Filename :
4017056
Link To Document :
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