• DocumentCode
    2729909
  • Title

    A 640/spl times/512 CMOS image sensor with ultra wide dynamic range floating-point pixel-level ADC

  • Author

    Yang, D.X.D. ; El Gamal, Abbas ; Fowler, B. ; Hui Tian

  • Author_Institution
    Inf. Syst. Lab., Stanford Univ., CA, USA
  • fYear
    1999
  • fDate
    17-17 Feb. 1999
  • Firstpage
    308
  • Lastpage
    309
  • Abstract
    The dynamic range of an image sensor is often not wide enough to capture scenes with both high lights and dark shadows. A 640/spl times/512 image sensor with Nyquist rate pixel level ADC implemented in a 0.35 /spl mu/m CMOS technology shows how a pixel level ADC enables flexible efficient implementation of multiple sampling. Since pixel values are available to the ADCs at all times, the number and timing of the samples as well as the number of bits obtained from each sample can be freely selected without the long readout time of APS. Typically, hundreds of nanoseconds of settling time per row are required for APS readout. In contrast, using pixel level ADC, digital data is read out at fast SRAM speeds. This demonstrates another fundamental advantage of pixel level ADC-the ability to programmably widen dynamic range with no loss in SNR.
  • Keywords
    CMOS image sensors; analogue-digital conversion; floating point arithmetic; 0.35 micron; 327680 pixel; 512 pixel; 640 pixel; CMOS image sensor; Nyquist rate pixel level ADC; SRAM speeds; dynamic range; floating-point pixel-level ADC; multiple sampling; readout time; settling time; CMOS image sensors; CMOS technology; Dynamic range; Image sampling; Image sensors; Layout; Lighting; Pixel; Signal generators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-5126-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.1999.759263
  • Filename
    759263