DocumentCode
2729909
Title
A 640/spl times/512 CMOS image sensor with ultra wide dynamic range floating-point pixel-level ADC
Author
Yang, D.X.D. ; El Gamal, Abbas ; Fowler, B. ; Hui Tian
Author_Institution
Inf. Syst. Lab., Stanford Univ., CA, USA
fYear
1999
fDate
17-17 Feb. 1999
Firstpage
308
Lastpage
309
Abstract
The dynamic range of an image sensor is often not wide enough to capture scenes with both high lights and dark shadows. A 640/spl times/512 image sensor with Nyquist rate pixel level ADC implemented in a 0.35 /spl mu/m CMOS technology shows how a pixel level ADC enables flexible efficient implementation of multiple sampling. Since pixel values are available to the ADCs at all times, the number and timing of the samples as well as the number of bits obtained from each sample can be freely selected without the long readout time of APS. Typically, hundreds of nanoseconds of settling time per row are required for APS readout. In contrast, using pixel level ADC, digital data is read out at fast SRAM speeds. This demonstrates another fundamental advantage of pixel level ADC-the ability to programmably widen dynamic range with no loss in SNR.
Keywords
CMOS image sensors; analogue-digital conversion; floating point arithmetic; 0.35 micron; 327680 pixel; 512 pixel; 640 pixel; CMOS image sensor; Nyquist rate pixel level ADC; SRAM speeds; dynamic range; floating-point pixel-level ADC; multiple sampling; readout time; settling time; CMOS image sensors; CMOS technology; Dynamic range; Image sampling; Image sensors; Layout; Lighting; Pixel; Signal generators; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
0-7803-5126-6
Type
conf
DOI
10.1109/ISSCC.1999.759263
Filename
759263
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