A locally adaptive CMOS image sensor with 90 dB dynamic range

Author

Schrey, O. ; Hauschild, R. ; Hosticka, B.J. ; Iurgel, Uri ; Schwarz, Mathias

Author_Institution

Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany

fYear

1999

fDate

17-17 Feb. 1999

Firstpage

310

Lastpage

311

Abstract

An integrated 128/spl times/128 CMOS image sensor with programmable diffusion kernel for local brightness adaptation and contrast enhancement achieves local brightness adaptation by dividing each individual pixel photocurrent by the average photocurrent of the corresponding kernel. The chip is realized in 1 /spl mu/m standard CMOS. Pixel pitch is 47 /spl mu/m and total chip area is 86.4 mm/sup 2/. Power dissipation is 20 mW at 5 V power supply. The maximum clock frequency is around 4 MHz allowing 240 frames/s frame rate and 90 dB dynamic range with 35 dB signal to noise ratio (SNR). The size of the adaptation kernel is 3 b programmable.

Keywords

CMOS image sensors; adaptive signal processing; brightness; 1 micron; 20 mW; 4 MHz; 47 micron; 5 V; adaptation kernel; average photocurrent; clock frequency; contrast enhancement; dynamic range; frame rate; local brightness adaptation; locally adaptive CMOS image sensor; pixel photocurrent; pixel pitch; power dissipation; programmable diffusion kernel; signal to noise ratio; total chip area; Brightness; CMOS image sensors; Clocks; Dynamic range; Kernel; Photoconductivity; Pixel; Power dissipation; Power supplies; Signal to noise ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

0-7803-5126-6

Type

conf

DOI

10.1109/ISSCC.1999.759264

Filename

759264