DocumentCode :
2729952
Title :
Characterization of Binding Energy of Al Hexafluoride [AlF6]3- in X-Ray Photoelectron Spectroscopy
Author :
Younan, Hua
Author_Institution :
Chartered Semicond. Mfg. Ltd., Singapore
fYear :
2006
fDate :
3-7 July 2006
Firstpage :
214
Lastpage :
216
Abstract :
X-ray photoelectron spectroscopy/electron spectroscopy for chemical analysis (XPS/ESCA) is being widely used in failure analysis of semiconductor industries and wafer fabrication, as it is able to provide not only elemental information, but also chemical binding information. For example, using its fingerprint of C=O, we are able to identify possible root causes of carbon contamination in wafer fabrication (fab). In wafer fab, it is also being successfully used in failure analysis for Al fluorides on microchip Al bondpads. It is well known fact that it is difficult or impossible for us to fully free fluorine (F) from Al bondpads if F-based chemical gases such as CF4 and CHF3 are used for Al bondpad opening process in wafer fab. However, it is possible to reduce and control the F contamination to within the background/baseline level, which will not affect the bonding process at assembly houses
Keywords :
ESCA; X-ray spectroscopy; aluminium compounds; binding energy; carbon compounds; corrosion; failure analysis; integrated circuit manufacture; AlF6; CF4; CHF3; X-ray photoelectron spectroscopy; carbon contamination; chemical binding; electron spectroscopy for chemical analysis; failure analysis; semiconductor industries; wafer fabrication; Chemical analysis; Chemical elements; Chemical industry; Contamination; Electronics industry; Electrons; Fabrication; Failure analysis; Spectroscopy; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
1-4244-0205-0
Electronic_ISBN :
1-4244-0206-9
Type :
conf
DOI :
10.1109/IPFA.2006.251033
Filename :
4017058
Link To Document :
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