Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

Author

El-Hennawy, Adel ; Hassan, Kamel ; El-Ela, Ashraf Ramadan Abou ; Abd El-Hameed, H.

Author_Institution

Fac. of Eng., Ain Shams Univ., Cairo, Egypt

fYear

1998

fDate

24-26 Feb 1998

Abstract

MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition, original behavior and new I-V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which are already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology

Keywords

MOS analogue integrated circuits; MOSFET; VLSI; analogue storage; negative resistance devices; semiconductor device models; I-V characteristics; MOSFET technology; biasing condition; characterization; gate geometry; super selective IC tank circuits; trapezoidal shape; voltage controlled negative resistance; Area measurement; Communication system control; Electrical resistance measurement; Geometry; Instruments; Integrated circuit measurements; Integrated circuit technology; MOSFET circuits; Shape; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National

Conference_Location

Cairo

Print_ISBN

0-7803-5121-5

Type

conf

DOI

10.1109/NRSC.1998.711502

Filename

711502