Title :
Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices
Author :
El-Saba, Muhammad H.
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
Abstract :
In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results
Keywords :
MOSFET; electron mobility; elemental semiconductors; semiconductor device models; silicon; 0.25 micron; Si; electron drift mobility; electron temperature; electron velocity overshoot; hydrodynamic model; sub-quarter micron MOSFET devices; sub-quarter micron Si structures; Distributed decision making; Doping; Electron mobility; Helium; Home appliances; Hydrodynamics; MOSFET circuits; Medical simulation; Silicon; Temperature;
Conference_Titel :
Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National
Conference_Location :
Cairo
Print_ISBN :
0-7803-5121-5
DOI :
10.1109/NRSC.1998.711503
