DocumentCode
2730021
Title
Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices
Author
El-Saba, Muhammad H.
Author_Institution
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
fYear
1998
fDate
24-26 Feb 1998
Abstract
In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results
Keywords
MOSFET; electron mobility; elemental semiconductors; semiconductor device models; silicon; 0.25 micron; Si; electron drift mobility; electron temperature; electron velocity overshoot; hydrodynamic model; sub-quarter micron MOSFET devices; sub-quarter micron Si structures; Distributed decision making; Doping; Electron mobility; Helium; Home appliances; Hydrodynamics; MOSFET circuits; Medical simulation; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National
Conference_Location
Cairo
Print_ISBN
0-7803-5121-5
Type
conf
DOI
10.1109/NRSC.1998.711503
Filename
711503
Link To Document